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Hamamatsu

Si photodiode for visible to near IR (320 to 1100 nm), general-purpose photometry. Photosensitive area - 1.1 × 1.1 mm. Peak sensitivity wavelength (typ.) - 960 nm. Package category - TO-18. Photosensitivity (typ.) - 0.6 A/W. Terminal capacitance (typ.) - 140 pF. Rise time (typ.) - 0.4 μs. Dark current (max.) - 2 pA. Reverse voltage (max.) - 30 V/

STMicroelectronics

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Xiamen Bery Communication Equipment Co., Ltd.

Coaxial InGaAs Pin Diode Module 1100 – 1650 nm, receptacle package series, FC connector

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Coaxial InGaAs Pin Diode Module 1100 – 1650 nm, receptacle package series, FC connector

Xiamen Bery Communication Equipment Co., Ltd.

Coaxial InGaAs Pin Diode Module 1100 – 1650 nm, pigtail package series

LaserCom LLC

PIN photodiode module, 1000-1650 nm, 4 GHz, 40 mW