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Si photodiode for visible to near IR (320 to 1100 nm), general-purpose photometry. Photosensitive area - 1.1 × 1.1 mm. Peak sensitivity wavelength (typ.) - 960 nm. Package category - TO-18. Photosensitivity (typ.) - 0.6 A/W. Terminal capacitance (typ.) - 140 pF. Rise time (typ.) - 0.4 μs. Dark current (max.) - 2 pA. Reverse voltage (max.) - 30 V/

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