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Pacchi
Risultati 1021-1030 di 3096
Risultati per pagina:
Nome
Numero parte
Fornitore
Littelfuse
Descrizione
SOT035P100X100-05
Contributo di
Azienda
Etteplan Finland Oz
Configurazioni?
No
Download
108
Aggiunto il
11 giu, 2019
Numero parte
Fornitore
TriQuint
Descrizione
General DescriptionThe TriQuint TGA2704-SM provides 21 dB of smallsignal gain and 8W of output power across 9-11GHz. TGA2704-SM is designed using TriQuint’sproven standard 0.25μm gate pHEMT 3MI productionprocess.The TGA2704-SM features a ceramic QFN designedfor surface mount to a printed circuit board.Fully matched to 50 ohms and with integrated DCblocking capacitors on both I/O ports, the TGA2704-SM is ideally suited to support both commercialand defense related applicationsLead-free and RoHS compliant.Applications- Marine and Air Radar, Traffic Control- Weather Monitoring- Port Security- Point-to-Point Radio- CommunicationsProduct Features- Frequency Range: 9 - 11 GHz- Saturated Output Power: 39 dBm- Small Signal Gain: 21 dB- Bias: Vd = 9 V, Idq = 1.05 A, Vg = -0.74 V typical
Contributo di
Azienda
Speed Design
Configurazioni?
No
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71
Aggiunto il
10 giu, 2019
Numero parte
Fornitore
CREE
Descrizione
CGHV96100F2100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMTCree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FEToffers excellent power added efficiency in comparison to other technologies. GaNhas superior properties compared to silicon or gallium arsenide, including higherbreakdown voltage, higher saturated electron drift velocity and higher thermalconductivity. GaN HEMTs also offer greater power density and wider bandwidthscompared to GaAs transistors. This IM FET is available in a metal/ceramic flangedpackage for optimal electrical and thermal performance.
Contributo di
Azienda
Speed Design
Configurazioni?
No
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119
Aggiunto il
9 giu, 2019
Descrizione
Power Splitter/Combiner3 Way-0° 50Ω 1 to 300 MHz
Contributo di
Azienda
Speed Design
Configurazioni?
No
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66
Aggiunto il
22 mag, 2019
Descrizione
Nessuno fornito
Contributo di
Azienda
SFU
Configurazioni?
Download
259
Aggiunto il
8 giu, 2019
Descrizione
Nessuno fornito
Contributo di
Azienda
SFU
Configurazioni?
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185
Aggiunto il
8 giu, 2019
Descrizione
Nessuno fornito
Contributo di
Azienda
SFU
Configurazioni?
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122
Aggiunto il
8 giu, 2019
Nome
Descrizione
uQFN package, MAX dimensions: 2.25(L) x 1.4(W) x 0.5(H), 10 pins.
Contributo di
Azienda
Topcon Agriculture
Configurazioni?
No
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172
Aggiunto il
3 giu, 2019
Nome
Descrizione
Diode Body MicroSMA used by Taiwan Semiconductor
Contributo di
Azienda
exelonx
Configurazioni?
No
Download
64
Aggiunto il
1 giu, 2019
Numero parte
Fornitore
MACOM
Descrizione
Designed for wideband large signal amplifier and oscillator applicationsUp to 400 MHz range, in single-ended configurationN–Channel enhancement mode- Guaranteed 28 volt, 150 MHz performanceOutput power = 15 wattsNarrow band gain = 16 dB (Typ.)Efficiency = 60% (Typ.)- Small– and large–signal characterization- 100% tested for load mismatch at all phase angles with 30:1 VSWR- Excellent thermal stability, ideally suited for Cass A operation- Facilitates manual gain control, ALC and modulation techniques
Contributo di
Azienda
Speed Design
Configurazioni?
No
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84
Aggiunto il
25 mag, 2019